GT60J323H 2006-11-01 1 toshiba insulated gate bipolar tr ansistor silicon n channel igbt GT60J323H current resonance inverter switching application induction heating cooking appliances induction heating appliances ? enhancement mode type ? high speed : t f = 0.12 s (typ.) (i c = 60a) ? low saturation voltage: v ce (sat) = 2.1 v (typ.) (i c = 60a) ? frd included between emitter and collector ? fourth generation igbt ? to-3p(lh) (toshiba package name) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 25 v @ tc = 100c 30 continuous collector current @ tc = 25c i c 60 a pulsed collector current i cp 120 a dc i f 30 diode forward current pulsed i fp 120 a @ tc = 100c 68 collector power dissipation @ tc = 25c p c 170 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance (igbt) r th (j-c) 0.74 c/w thermal resistance (diode) r th (j-c) 1.56 c/w equivalent circuit marking unit: mm jedec D jeita D toshiba 2-21f2c weight: 9.75 g (typ.) gate emitter collector 60j323h toshiba japan lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
GT60J323H 2006-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 25 v, v ce = 0 D D 500 na collector cut-off current i ces v ce = 600 v, v ge = 0 D D 1.0 ma gate-emitter cut-off voltage v ge (off) i c = 60 ma, v ce = 5 v 3.0 D 6.0 v collector-emitter saturation voltage v ce (sat) i c = 60 a, v ge = 15 v D 2.1 2.9 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz D 4800 D pf rise time t r D 0.26 D turn-on time t on D 0.39 D fall time t f D 0.12 0.21 switching time turn-off time t off resistive load v cc = 300 v, i c = 60 a v gg = 15 v, r g = 30 (note 1) D 0.41 D s diode forward voltage v f i f = 30 a, v ge = 0 D 1.4 2.0 v reverse recovery time t rr i f = 30 a, di/dt = ? 100 a/ s D 0.1 0.2 s note 1: switching time measurement circuit and input/output waveforms 10% 90% v ge v ce i c t d (off) t of f t r t on 0 0 t f 10% 10% 90% 90% r g v cc r l 0
GT60J323H 2006-11-01 3 0 0.5 1 1.5 2 2.5 3 3.5 -60 -20 20 60 100 140 ????? v ge =15v i c =120a 80 60 30 10 0 20 40 60 80 100 120 024681012 ????? v ce =5v tc=125 25 -40 0 20 40 60 80 100 120 012345 20 9 15 10 8.5 8 7.5 v ge =6v ??? ? tc=125 7 6 . 5 0 20 40 60 80 100 120 012345 ??? ?? tc=25 20 v ge =7v 7.5 8 8.5 9 10 15 0 20 40 60 80 100 120 012345 v ge =7v 7.5 8 8.5 9 10 ????? tc=-40 20 15 collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc common emitter tc=- common emitter tc=25 common emitter tc=125 common emitter v ce =5v common emitter v ge =5v
GT60J323H 2006-11-01 4 0.01 0.1 1 10 0 10203040506070 ????? v cc =300v r g =30 v gg =15v tc=25 toff t f t on t 0.01 0.1 1 10 1 10 100 1000 ????? v cc =300v i c =60a v gg =15v tc=25 toff tf ton t collector-emitter voltage v ce (v) collector current i c (a) switching time ( s) switching time ? i c collector current i c (a) switching time ( s) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) gate-emitter voltage v ge (v) gate charge q g (nc) v ce, v ge ? q g collector-emitter voltage v ce (v) safe operating area gate resistance r g ( ? ) switching time ? r g collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa v ce = 300 v common emitter r l = 5 tc = 25c 400 0 0 80 160 240 320 100 200 300 200 100 0 5 10 15 20 common emitter v ge = 0 f = 1 mhz tc = 25c 30000 10 0.0 1 10 100 1000 100 1000 10000 c res 300 500 30 50 3000 5000 c oes c ies t j 125c v gg = 20 v r g = 10 3000 1 1 10 1000 10000 10 30 100 3 5 50 300 100 500 1000 * : single non-repetitive pulse tc = 25c curves must be derated linearly with increases in temperature. 3000 1 1 10 1000 10000 10 30 100 3 5 50 300 100 500 10 s* 1000 100 s* 10 ms * 1 ms * dc operation i c max (continuous) i c max (pulsed) * common emitter v cc = 300 v r g = 30 v gg = 15 v tc = 25c common emitter v cc = 300 v r g = 30 v gg = 15 v tc = 25c
GT60J323H 2006-11-01 5 forward voltage v f (v) i f ? v f forward current i f (a) peak reverse recovery current i rr (a) reverse voltage v r (v) reverse recovery time t rr (ns) i rr , t rr ? i f forward current i f (a) i rr , t rr ? di/dt di/dt (a/ s) reverse recovery time t rr (ns) peak reverse recovery current i rr (a) 200 0 100 case temperature tc (c) maximum dc collector current i c max (a) pulse width t w (s) r th (t) ? t w transient thermal impedance r th (t) (c/w) junction capacitance c j (pf) c j ? v r tc = 125c 25 common emitter v ge = 0 ? 40 0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 common emitter di/dt = ? 100 a/ s v ge = 0 tc = 25c 1 3 5 10 50 0 5 10 15 25 30 20 i r r t rr 10 30 100 500 30 300 50 f = 1 mhz tc = 25c 1000 3 1 10 100 500 300 50 30 5 3 5 10 100 30 50 300 500 0 10 8 6 4 2 0 40 120 160 200 common emitter i f = 30 a tc = 25c i rr t r r 80 10 ? 2 10 ? 5 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 ? 1 10 0 10 1 10 2 diode stage tc = 25c igbt stage 10 ? 4 10 ? 3 10 3 i c max ? tc ??? v ge = 15 v 25 50 75 100 125 150 :?:?:?:?:?:?:w:?:?::?:?:?::w :- :?:? :?b?:?:- 70 0 10 20 30 40 50 60
GT60J323H 2006-11-01 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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